 |  | | |
| PartNumber | FQI3N25TU | FQI3N25 | FQI3N25TUFSC |
| Description | MOSFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 2.8 A | - | - |
| Rds On Drain Source Resistance | 2.2 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.13 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 7.88 mm | - | - |
| Length | 10.29 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 5.5 ns | - | - |
| Typical Turn On Delay Time | 6.6 ns | - | - |
| Unit Weight | 0.084199 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQI3N80TU | MOSFET 800V N-Channel QFET | |
| FQI3N25TU | MOSFET | ||
| FQI3N30TU | MOSFET 300V N-Channel QFET | ||
| FQI3N25 | नयाँ र मौलिक | ||
| FQI3N25TUFSC | नयाँ र मौलिक | ||
| FQI3N30 | नयाँ र मौलिक | ||
| FQI3N30TUFSC | नयाँ र मौलिक | ||
| FQI3N40TUFSC | नयाँ र मौलिक | ||
| FQI3N60 | नयाँ र मौलिक | ||
| FQI3N80 | नयाँ र मौलिक | ||
| FQI3N90 | नयाँ र मौलिक | ||
ON Semiconductor |
FQI3N25TU | MOSFET N-CH 250V 2.8A I2PAK | |
| FQI3N30TU | MOSFET N-CH 300V 3.2A I2PAK | ||
| FQI3N40TU | MOSFET N-CH 400V 2.5A I2PAK | ||
| FQI3N80TU | MOSFET N-CH 800V 3A I2PAK | ||
| FQI3N90TU | MOSFET N-CH 900V 3.6A I2PAK |