FQB27N25T

FQB27N25TM-F085 vs FQB27N25TM vs FQB27N25TM-AM002

 
PartNumberFQB27N25TM-F085FQB27N25TMFQB27N25TM-AM002
DescriptionMOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFETPower Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current25.5 A--
Rds On Drain Source Resistance108 mOhms--
Vgs th Gate Source Threshold Voltage4.1 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge45 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation417 W--
ConfigurationSingle--
QualificationAEC-Q101--
TradenameUltraFET--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFQB27N25TM_F085--
Transistor Type1 N-Channel--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time60 ns--
Product TypeMOSFET--
Rise Time122 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time81 ns--
Typical Turn On Delay Time36 ns--
Part # AliasesFQB27N25TM_F085--
Unit Weight0.046296 oz--
निर्माता भाग # विवरण RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB27N25TM-F085 MOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFET
FQB27N25TM Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FQB27N25TM-AM002 नयाँ र मौलिक
FQB27N25TM-NL नयाँ र मौलिक
FQB27N25TM_F085 250V, 0.11OHM, 25.5A, N-CH MOS
FQB27N25TU नयाँ र मौलिक
ON Semiconductor
ON Semiconductor
FQB27N25TM_AM002 MOSFET N-CH 250V 25.5A D2PAK
FQB27N25TM-F085 MOSFET N-CH 250V 25.5A 131M
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