FJN4312 stock, FJN4312, FJN4312RBU

FJN4312RBU vs FJN4312RTA


PartNumber	FJN4312RBU	FJN4312RTA
Description	Bipolar Transistors - Pre-Biased PNP/40V/100mA/47K	Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased
RoHS	Y	Y
Configuration	Single	Single
Transistor Polarity	PNP	PNP
Typical Input Resistor	47 kOhms	47 kOhms
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3 Kinked Lead
DC Collector/Base Gain hfe Min	100	100
Collector Emitter Voltage VCEO Max	40 V	40 V
Continuous Collector Current	- 0.1 A	- 0.1 A
Peak DC Collector Current	100 mA	100 mA
Pd Power Dissipation	300 mW	300 mW
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Packaging	Bulk	Ammo Pack
DC Current Gain hFE Max	600	600
Emitter Base Voltage VEBO	- 5 V	- 5 V
Height	5.33 mm	5.33 mm
Length	5.2 mm	5.2 mm
Type	PNP Epitaxial Silicon Transistor	PNP Epitaxial Silicon Transistor
Width	4.19 mm	4.19 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Product Type	BJTs - Bipolar Transistors - Pre-Biased	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity	1000	2000
Subcategory	Transistors	Transistors
Unit Weight	0.006286 oz	0.010088 oz

Search Part Number : "FJN4312", Match & Start with "FJN4312" - Total : 5

निर्माता	भाग #	विवरण
ON Semiconductor / Fairchild	FJN4312RBU	Bipolar Transistors - Pre-Biased PNP/40V/100mA/47K
ON Semiconductor / Fairchild	FJN4312RTA	Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
ON Semiconductor	FJN4312RTA	TRANS PREBIAS PNP 300MW TO92-3
ON Semiconductor	FJN4312RBU	TRANS PREBIAS PNP 300MW TO92-3
	FJN4312R	नयाँ र मौलिक