PartNumber | FGP10N60UNDF | FGP10N60 | FGP10N60RUFD |
Description | IGBT Transistors 600V 10A NPT IGBT | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-220-3 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Emitter Saturation Voltage | 2.3 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 10 A | - | - |
Pd Power Dissipation | 139 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | FGP10N60UNDF | - | - |
Packaging | Tube | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Gate Emitter Leakage Current | +/- 10 uA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.063493 oz | - | - |