FF800R12

FF800R12KE3 vs FF800R12KF4 vs FF800R12KE3NOSA1

 
PartNumberFF800R12KE3FF800R12KF4FF800R12KE3NOSA1
DescriptionIGBT Modules 1200V 800A DUALIGBT Modules 1200V 800A DUALIGBT MODULE VCES 1200V 800A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSNN-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage1.7 V2.7 V-
Continuous Collector Current at 25 C1200 A800 A-
Gate Emitter Leakage Current400 nA400 nA-
Pd Power Dissipation3.9 kW5 kW-
Package / CaseIHM130IHM-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 125 C-
PackagingTray--
Height38 mm38 mm-
Length140 mm140 mm-
Width130 mm130 mm-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleSMD/SMTChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity22-
SubcategoryIGBTsIGBTs-
Part # AliasesFF800R12KE3NOSA1 SP000100571--
Technology-Si-
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
FF800R12KE3 IGBT Modules 1200V 800A DUAL
FF800R12KF4 IGBT MODULE VCES 1200V 800A
FF800R12KE3NOSA1 IGBT MODULE VCES 1200V 800A
FF800R12KL4CNOSA1 IGBT MODULE 1200V 800A
Infineon Technologies
Infineon Technologies
FF800R12KF4 IGBT Modules 1200V 800A DUAL
FF800R12KL4C IGBT Modules 1200V 800A DUAL
FF800R12KE3 IGBT Modules 1200V 800A DUAL
FF800R12KF4 083395 नयाँ र मौलिक
FF800R12KL4CB1 नयाँ र मौलिक
FF800R12KL4C_B1 नयाँ र मौलिक
FF800R12KS4 नयाँ र मौलिक
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