FF600R12IP

FF600R12IP4V vs FF600R12IP4 vs FF600R12IP4BOSA1

 
PartNumberFF600R12IP4VFF600R12IP4FF600R12IP4BOSA1
DescriptionIGBT ModulesIGBT Modules N-CH 1.2KV 600AIGBT MODULE 1200V 600A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
PackagingTrayTray-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity33-
SubcategoryIGBTsIGBTs-
Part # AliasesFF600R12IP4VBOSA1 SP001124870FF600R12IP4BOSA1 SP000609754-
Product-IGBT Silicon Modules-
Configuration-Dual-
Collector Emitter Voltage VCEO Max-1200 V-
Collector Emitter Saturation Voltage-2.1 V-
Continuous Collector Current at 25 C-600 A-
Gate Emitter Leakage Current-400 nA-
Pd Power Dissipation-3.35 kW-
Package / Case-PRIME2-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Height-38 mm-
Length-172 mm-
Width-89 mm-
Mounting Style-Chassis Mount-
Maximum Gate Emitter Voltage-20 V-
Unit Weight-1.819 lbs-
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
FF600R12IP4V IGBT Modules
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FF600R12IP4BOSA1 IGBT MODULE 1200V 600A
FF600R12IP4VBOSA1 IGBT MODULE VCES 600V 600A
FF600R12IP4 Trans IGBT Module N-CH 1.2KV 600A 8-pin PRIME2-1 (Alt: SP000609754)
FF600R12IP4V IGBT Modules
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