FF50R12R

FF50R12RT4 vs FF50R12RT4 , 1N5375B vs FF50R12RT4HOSA1

 
PartNumberFF50R12RT4FF50R12RT4 , 1N5375BFF50R12RT4HOSA1
DescriptionIGBT Modules IGBT 1200V 50AIGBT MODULE 1200V 50A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C50 A--
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation285 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF50R12RT4HOSA1 SP000624912--
Unit Weight5.643834 oz--
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
FF50R12RT4 IGBT Modules IGBT 1200V 50A
FF50R12RT4HOSA1 IGBT MODULE 1200V 50A
FF50R12RT4 IGBT Modules IGBT 1200V 50A
FF50R12RT4 , 1N5375B नयाँ र मौलिक
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