FDU6680

FDU6680 vs FDU6680(Q) vs FDU6680A(Q)

 
PartNumberFDU6680FDU6680(Q)FDU6680A(Q)
DescriptionMOSFET 30V N-Channel PowerTrench
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current46 A--
Rds On Drain Source Resistance10 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min47 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time7 ns--
Factory Pack Quantity75--
SubcategoryMOSFETs--
Typical Turn Off Delay Time29 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesFDU6680_NL--
Unit Weight0.139332 oz--
निर्माता भाग # विवरण RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDU6680 MOSFET 30V N-Channel PowerTrench
ON Semiconductor
ON Semiconductor
FDU6680 MOSFET N-CH 30V 12A IPAK
FDU6680(Q) नयाँ र मौलिक
FDU6680A(Q) नयाँ र मौलिक
FDU6680A-Q नयाँ र मौलिक
FDU6680AS नयाँ र मौलिक
FDU6680FSC नयाँ र मौलिक
FDU6680A Power Field-Effect Transistor, 14A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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