 | | | |
| PartNumber | FDN360P | FDN361BN | FDN371N |
| Description | MOSFET SSOT-3 P-CH -30V | MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET | MOSFET 20V N-Ch PowerTrench |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SSOT-3 | SSOT-3 | SSOT-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 20 V |
| Id Continuous Drain Current | 2 A | 1.4 A | 2.5 A |
| Rds On Drain Source Resistance | 63 mOhms | 110 mOhms | 22 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 12 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | PowerTrench | PowerTrench | PowerTrench |
| Packaging | Reel | Reel | Reel |
| Height | 1.12 mm | 1.12 mm | 1.12 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Series | FDN360P | FDN361BN | FDN371N |
| Transistor Type | 1 P-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - | MOSFET |
| Width | 1.4 mm | 1.4 mm | 1.4 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 5 S | - | 16 S |
| Fall Time | 13 ns | 8 ns | 9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 13 ns | 8 ns | 9 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 11 ns | 16 ns | 17 ns |
| Typical Turn On Delay Time | 6 ns | 3 ns | 7 ns |
| Part # Aliases | FDN360P_NL | - | FDN371N_NL |
| Unit Weight | 0.001058 oz | 0.001058 oz | 0.001058 oz |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDN360P | MOSFET SSOT-3 P-CH -30V | |
| FDN361BN | MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET | ||
| FDN537N | MOSFET 30V Single N-Ch PowerTrench MOSFET | ||
| FDN371N | MOSFET 20V N-Ch PowerTrench | ||
ON Semiconductor |
FDN371N | IGBT Transistors MOSFET 20V N-Ch PowerTrench | |
| FDN360P | MOSFET P-CH 30V 2A SSOT3 | ||
| FDN361AN | MOSFET N-CH 30V 1.8A SSOT-3 | ||
| FDN361BN | MOSFET N-CH 30V 1.4A SSOT3 | ||
| FDN372S | MOSFET N-CH 30V 2.6A SSOT-3 | ||
| FDN537N | MOSFET N-CH 30V 6.5A SSOT-3 | ||
| FDN360P-NBGT003B | MOSFET P-CH 30V SSOT3 | ||
| FDN359N-NL | नयाँ र मौलिक | ||
| FDN360 | नयाँ र मौलिक | ||
| FDN360P SOT23-360 PB-F | नयाँ र मौलिक | ||
| FDN360P 360 | नयाँ र मौलिक | ||
| FDN360P 360 F | नयाँ र मौलिक | ||
| FDN360P SOT23 | नयाँ र मौलिक | ||
| FDN360P , MAX6322UK | नयाँ र मौलिक | ||
| FDN360P 360U | नयाँ र मौलिक | ||
| FDN360P N011 | नयाँ र मौलिक | ||
| FDN360P NL | नयाँ र मौलिक | ||
| FDN360P-NL , 1N5248B-TR | नयाँ र मौलिक | ||
| FDN360P-NL/360 | नयाँ र मौलिक | ||
| FDN360PN | नयाँ र मौलिक | ||
| FDN360PV6 | नयाँ र मौलिक | ||
| FDN361AN 1.8A/30V | नयाँ र मौलिक | ||
| FDN361AN-NL | नयाँ र मौलिक | ||
| FDN361AN-NL SOT23-361 | नयाँ र मौलिक | ||
| FDN361AN-NL , 1N5249B | नयाँ र मौलिक | ||
| FDN361AR | नयाँ र मौलिक | ||
| FDN3622 | नयाँ र मौलिक | ||
| FDN368P-NL | नयाँ र मौलिक | ||
| FDN36DP | नयाँ र मौलिक | ||
| FDN371N-NL | नयाँ र मौलिक | ||
| FDN371N-NL , 1N5249BRL | नयाँ र मौलिक | ||
| FDN372S , 1N5250B | नयाँ र मौलिक | ||
| FDN372S-NL , 1N5250BRL | नयाँ र मौलिक | ||
| FDN372S_F095 | नयाँ र मौलिक | ||
| FDN452P-NL | नयाँ र मौलिक | ||
| FDN458P-NL | नयाँ र मौलिक | ||
| FDN503 | नयाँ र मौलिक | ||
| FDN5330SX | नयाँ र मौलिक | ||
| FDN533SX | नयाँ र मौलिक | ||
| FDN360P. | नयाँ र मौलिक | ||
| FDN360P-CUT TAPE | नयाँ र मौलिक | ||
| FDN361BN-NL | नयाँ र मौलिक | ||
| FDN363N-NL | नयाँ र मौलिक | ||
| FDN372S-NL | नयाँ र मौलिक | ||
| FDN537N-NL | नयाँ र मौलिक | ||
| FDN363N | Power Field-Effect Transistor, 1A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |