 | |  | |
| PartNumber | FDBL86361-F085 | FDBL86363-F085 | FDBL86361_F085 |
| Description | MOSFET NMOS TOLL 80V 1.4 MOHM | MOSFET N-Channel Power Trench MOSFET | IGBT Transistors MOSFET N-Channel Power Trench MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | H-PSOF-8 | H-PSOF-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 300 A | 240 A | - |
| Rds On Drain Source Resistance | 1.1 mOhms | 2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 172 nC | 130 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 429 W | 357 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | PowerTrench | PowerTrench | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.4 mm | 2.4 mm | - |
| Length | 10.48 mm | 10.48 mm | - |
| Series | FDBL86361_F085 | FDBL86363_F085 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.9 mm | 9.9 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Fall Time | 48 ns | 33 ns | 48 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 73 ns | 63 ns | 73 ns |
| Factory Pack Quantity | 2000 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 87 ns | 61 ns | 87 ns |
| Typical Turn On Delay Time | 42 ns | 39 ns | 42 ns |
| Part # Aliases | FDBL86361_F085 | FDBL86363_F085 | - |
| Unit Weight | 0.029985 oz | 0.029985 oz | 0.029986 oz |
| Package Case | - | - | MO-299A-8 |
| Pd Power Dissipation | - | - | 429 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 300 A |
| Vds Drain Source Breakdown Voltage | - | - | 80 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Rds On Drain Source Resistance | - | - | 3.1 mOhms |
| Qg Gate Charge | - | - | 172 nC |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDBL86361-F085 | MOSFET NMOS TOLL 80V 1.4 MOHM | |
| FDBL86366-F085 | MOSFET N-Channel Power Trench MOSFET | ||
| FDBL86363-F085 | MOSFET N-Channel Power Trench MOSFET | ||
| FDBL86361_F085 | IGBT Transistors MOSFET N-Channel Power Trench MOSFET | ||
| FDBL86366_F085 | N-CHANNEL POWER TRENCH MOSFET | ||
| FDBL86361 | नयाँ र मौलिक | ||
| FDBL86363 | नयाँ र मौलिक | ||
| FDBL86366 | नयाँ र मौलिक | ||
ON Semiconductor |
FDBL86361-F085 | MOSFET N-CH 80V 300A PSOF8 | |
| FDBL86366-F085 | MOSFET N-CH 80V 220A PSOF8 | ||
| FDBL86363-F085 | N-CHANNEL POWER TRENCH MOSFET |