 | | | |
| PartNumber | FDB86360-F085 | FDB86366-F085 | FDB86363-F085 |
| Description | MOSFET N-Channel Power Trench MOSFET | MOSFET 80V 110A N-Chnl PowerTrench MOSFET | MOSFET N-Channel Power Trench MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
| Id Continuous Drain Current | 110 A | 110 A | 110 A |
| Rds On Drain Source Resistance | 1.5 mOhms | 7 mOhms | 2 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 207 nC | 86 nC | 131 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 333 W | 176 W | 300 W |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | PowerTrench | PowerTrench | PowerTrench |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FDB86360_F085 | FDB86366_F085 | FDB86363_F085 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.65 mm | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 70 ns | 17 ns | 40 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 197 ns | 76 ns | 129 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 86 ns | 40 ns | 64 ns |
| Typical Turn On Delay Time | 75 ns | 30 ns | 38 ns |
| Part # Aliases | FDB86360_F085 | FDB86366_F085 | FDB86363_F085 |
| Unit Weight | 0.046296 oz | 0.046296 oz | 0.046296 oz |
| Channel Mode | - | Enhancement | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB8860 | MOSFET 30V N-Channel PwrTrch MOSFET | |
| FDB86360-F085 | MOSFET N-Channel Power Trench MOSFET | ||
| FDB8832 | MOSFET 30V N-CH Logic Level PowerTrench MOSFET | ||
| FDB86366-F085 | MOSFET 80V 110A N-Chnl PowerTrench MOSFET | ||
| FDB8896 | MOSFET 30V N-Channel PowerTrench | ||
| FDB8870 | MOSFET 30V N-Channel PowerTrench | ||
| FDB86563-F085 | MOSFET NMOS D2PAK 60V 1.8 MOHM | ||
| FDB86363-F085 | MOSFET N-Channel Power Trench MOSFET | ||
| FDB86569-F085 | MOSFET 60V SG N-channel PowerTrench MOSFET | ||
| FDB8896-F085 | MOSFET 30V N-CHAN PwrTrench | ||
| FDB8832-F085 | MOSFET 30V N-CHAN PwrTrench | ||
| FDB8874 | MOSFET 30V N-Channel PowerTrench | ||
| FDB8860-F085 | MOSFET 30V N-Ch PowerTrench | ||
| FDB86566-F085 | MOSFET 60V N-channel LL PowerTrench MOSFET | ||
ON Semiconductor |
FDB8896 | MOSFET N-CH 30V 93A TO-263AB | |
| FDB8870 | MOSFET N-CH 30V 23A TO-263AB | ||
| FDB8860 | MOSFET N-CH 30V 80A D2PAK | ||
| FDB86566-F085 | MOSFET N-CH 60V 110A D2PAK | ||
| FDB8832 | MOSFET N-CH 30V 80A D2PAK | ||
| FDB8870-F085 | MOSFET N-CH 30V 21A TO-263AB | ||
| FDB8874 | MOSFET N-CH 30V 121A TO-263AB | ||
| FDB8876 | MOSFET N-CH 30V 71A D2PAK | ||
| FDB8878 | MOSFET N-CH 30V 48A D2PAK | ||
| FDB8880 | MOSFET N-CH 30V 54A TO-263AB | ||
| FDB86363-F085 | MOSFET N-CH 80V 110A TO263 | ||
| FDB86360-F085 | MOSFET N-CH 80V 110A TO263 | ||
| FDB86360_SN00307 | MOSFET N-CH 80V | ||
| FDB86366-F085 | N-CHANNEL POWERTRENCH MOSFET | ||
| FDB86563-F085 | MV7 60V N-CHANNEL LOGIC LEVEL | ||
| FDB86569-F085 | MV7 60V SG N-CHANNEL POWERTREN | ||
| FDB8832-F085 | MOSFET N-CH 30V 34A D2PAK | ||
| FDB8860-F085 | MOSFET N-CH 30V 80A D2PAK | ||
| FDB8896-F085 | MOSFET N-CH 30V 19A TO-263AB | ||
| FDB8870_F085 | IGBT Transistors MOSFET 30V 160A 3.9Mohm N-CH POWERTRENCH | ||
| FDB8832_F085 | RF Bipolar Transistors MOSFET 30V N-CHAN PwrTrench | ||
| FDB8860_F085 | RF Bipolar Transistors MOSFET 30V N-Ch PowerTrench | ||
| FDB8880-NL | नयाँ र मौलिक | ||
| FDB86360_F085 | N-CHANNEL POWERTRENCH MOSFET | ||
| FDB86366_F085 | Trans MOSFET N-CH 80V 110A 3-Pin TO-263 T/R - Tape and Reel (Alt: FDB86366-F085) | ||
| FDB86566_F085 | MV7 60V N-channel Logic Level PowerTrench MOSFET (Alt: FDB86566-F085) | ||
| FDB8870 IRL3803STRLPBF | नयाँ र मौलिक | ||
| FDB8870-NL | नयाँ र मौलिक | ||
| FDB8874-NL | नयाँ र मौलिक | ||
| FDB8876-NL | नयाँ र मौलिक | ||
| FDB8878-NL | नयाँ र मौलिक | ||
| FDB8880-NL. | नयाँ र मौलिक | ||
| FDB8880TM | नयाँ र मौलिक | ||
| FDB8895 | नयाँ र मौलिक | ||
| FDB86360-F085-CUT TAPE | नयाँ र मौलिक | ||
| FDB8832-CUT TAPE | नयाँ र मौलिक |