 |  | | |
| PartNumber | FDB5800 | FDB5800_F085 | FDB6021P |
| Description | MOSFET 60V N-Ch Logic PowerTrench MOSFET | MOSFET N-CH 60V 80A D2PAK | MOSFET P-CH 20V 28A TO-263AB |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 5.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 242 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FDB5800 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 12.1 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27.1 ns | - | - |
| Typical Turn On Delay Time | 20.3 ns | - | - |
| Unit Weight | 0.046296 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB5800 | MOSFET 60V N-Ch Logic PowerTrench MOSFET | |
| FDB6030BL | MOSFET N-Channel PowerTrench | ||
| FDB6030L | MOSFET N-Channel PowerTrench | ||
ON Semiconductor |
FDB5800 | MOSFET N-CH 60V 80A D2PAK | |
| FDB5800_F085 | MOSFET N-CH 60V 80A D2PAK | ||
| FDB6021P | MOSFET P-CH 20V 28A TO-263AB | ||
| FDB6030BL | MOSFET N-CH 30V 40A TO-263AB | ||
| FDB6030L | MOSFET N-CH 30V 48A D2PAK | ||
| FDB6670AL | MOSFET N-CH 30V 80A D2PAK | ||
| FDB6670AS | MOSFET N-CH 30V 62A TO-263AB | ||
| FDB5800-NL | नयाँ र मौलिक | ||
| FDB5800/BKN | नयाँ र मौलिक | ||
| FDB5800TM | नयाँ र मौलिक | ||
| FDB5N90 | नयाँ र मौलिक | ||
| FDB6020P | नयाँ र मौलिक | ||
| FDB6021 | नयाँ र मौलिक | ||
| FDB6021P-NL | नयाँ र मौलिक | ||
| FDB6030 | नयाँ र मौलिक | ||
| FDB6030AL | नयाँ र मौलिक | ||
| FDB6030BL-NL | नयाँ र मौलिक | ||
| FDB6030BL. | नयाँ र मौलिक | ||
| FDB6030BLFSC | नयाँ र मौलिक | ||
| FDB6030L-NL | नयाँ र मौलिक | ||
| FDB6030LFSC | नयाँ र मौलिक | ||
| FDB6035 | नयाँ र मौलिक | ||
| FDB6035AL | MOSFET N-Channel PowerTrench | ||
| FDB6035AL-A | नयाँ र मौलिक | ||
| FDB6035AL-NL | नयाँ र मौलिक | ||
| FDB6035L | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FDB6035LFSC | नयाँ र मौलिक | ||
| FDB603AC | नयाँ र मौलिक | ||
| FDB603AL | - Bulk (Alt: FDB603AL) | ||
| FDB603AL_M | नयाँ र मौलिक | ||
| FDB6040L | नयाँ र मौलिक | ||
| FDB60N03L | नयाँ र मौलिक | ||
| FDB6201P | नयाँ र मौलिक | ||
| FDB6644 | 50 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | ||
| FDB6644S | 55 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | ||
| FDB6670 | नयाँ र मौलिक | ||
| FDB6670A | नयाँ र मौलिक | ||
| FDB6670AC | नयाँ र मौलिक | ||
| FDB6670AL-NL | नयाँ र मौलिक | ||
| FDB6670AL. | नयाँ र मौलिक | ||
| FDB6670ALFSC | नयाँ र मौलिक | ||
| FDB6670ALM | नयाँ र मौलिक | ||
| FDB6670AS-NL | नयाँ र मौलिक | ||
| FDB6670ASNL | नयाँ र मौलिक | ||
| FDB6670BL | नयाँ र मौलिक | ||
| FDB6670S | Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FDB5800-CUT TAPE | नयाँ र मौलिक |