| PartNumber | FCP099N65S3 | FCP099N60E |
| Description | MOSFET SuperFET3 650V 99 mOhm,TO220 PKG | MOSFET SuperFET2 600V Slow version |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 600 V |
| Id Continuous Drain Current | 30 A | 37 A |
| Rds On Drain Source Resistance | 79 mOhms | 87 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 3.5 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 61 nC | 114 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 227 W | 357 W |
| Configuration | Single | - |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Series | FCP099N65S3 | FCP099N60E |
| Transistor Type | 1 N-Channel | - |
| Brand | ON Semiconductor | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 19 S | 31.4 S |
| Fall Time | 5 ns | 22 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 24 ns | 23 ns |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 92 ns |
| Typical Turn On Delay Time | 23 ns | 24 ns |
| Unit Weight | 0.063493 oz | 0.063493 oz |
| Tradename | - | SuperFET II |
| Height | - | 16.3 mm |
| Length | - | 10.67 mm |
| Width | - | 4.7 mm |