FCD9N

FCD9N60NTM vs FCD9N60N vs FCD9N60TM

 
PartNumberFCD9N60NTMFCD9N60NFCD9N60TM
DescriptionMOSFET 600V N-Channel SupreMOS
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance330 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge17.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation92.6 W--
ConfigurationSingle--
TradenameSupreMOS--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFCD9N60NTM--
Transistor Type1 N-Channel--
TypeN-Channel MOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5.3 S--
Fall Time11.5 ns--
Product TypeMOSFET--
Rise Time9.6 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time28.7 ns--
Typical Turn On Delay Time13.2 ns--
Unit Weight0.009184 oz--
  • बाट सुरु गर्नुहोस्
  • FCD9N 4
  • FCD9 7
  • FCD 187
निर्माता भाग # विवरण RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCD9N60NTM MOSFET 600V N-Channel SupreMOS
FCD9N60N नयाँ र मौलिक
FCD9N60TM नयाँ र मौलिक
FCD9N90NTM नयाँ र मौलिक
ON Semiconductor
ON Semiconductor
FCD9N60NTM MOSFET N-CH 600V 9A DPAK
Top