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| PartNumber | FC6546010R | FC6543.1AE | FC654601 |
| Description | MOSFET Nch+Nch MOSFET 2.0x2.1mm Flat lead | ||
| Manufacturer | Panasonic | - | Panasonic Electronic Components |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 100 mA | - | - |
| Rds On Drain Source Resistance | 12 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 40 C | - | - 40 C |
| Maximum Operating Temperature | + 85 C | - | + 85 C |
| Pd Power Dissipation | 150 mW | - | - |
| Configuration | Dual | - | Dual |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Product | MOSFET | - | - |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Brand | Panasonic | - | - |
| Forward Transconductance Min | 60 mS | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 100 ns | - | 100 ns |
| Typical Turn On Delay Time | 100 ns | - | 100 ns |
| Unit Weight | 0.000265 oz | - | 0.000265 oz |
| Series | - | - | - |
| Package Case | - | - | 6-SMD, Flat Leads |
| Operating Temperature | - | - | 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SMini6-F3-B |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 150mW |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 12pF @ 3V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 100mA |
| Rds On Max Id Vgs | - | - | 12 Ohm @ 10mA, 4V |
| Vgs th Max Id | - | - | 1.5V @ 1μA |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | - | 150 mW |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 100 mA |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.2 V |
| Rds On Drain Source Resistance | - | - | 12 Ohms |
| Forward Transconductance Min | - | - | 60 mS |