EFC6602

EFC6602R-A-TR vs EFC6602R vs EFC6602R-A

 
PartNumberEFC6602R-A-TREFC6602REFC6602R-A
DescriptionMOSFET NCH+NCH 2.5V DRIVE SERIES
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseWLCSP-4--
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance5.9 mOhms--
PackagingReelTape & Reel (TR)Tape & Reel (TR)
SeriesEFC6602REFC6602REFC6602R
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Unit Weight0.002413 oz0.002413 oz0.002413 oz
Package Case-6-XFBGA6-XFBGA
Operating Temperature-150°C (TJ)150°C (TJ)
Mounting Type-Surface MountSurface Mount
Supplier Device Package-6-EFCP (2.7x1.81)6-EFCP (2.7x1.81)
FET Type-2 N-Channel (Dual) Common Drain2 N-Channel (Dual) Common Drain
Power Max-2W2W
Drain to Source Voltage Vdss---
Input Capacitance Ciss Vds---
FET Feature-Logic Level Gate, 2.5V DriveLogic Level Gate, 2.5V Drive
Current Continuous Drain Id 25°C---
Rds On Max Id Vgs---
Vgs th Max Id---
Gate Charge Qg Vgs-55nC @ 4.5V55nC @ 4.5V
Id Continuous Drain Current-18 A18 A
Vds Drain Source Breakdown Voltage-12 V12 V
Rds On Drain Source Resistance-5.9 mOhms5.9 mOhms
निर्माता भाग # विवरण RFQ
EFC6602R-TR MOSFET NCH+NCH 2.5V DRIVE SERIES
EFC6602R-A-TR MOSFET NCH+NCH 2.5V DRIVE SERIES
EFC6602R नयाँ र मौलिक
EFC6602R-A नयाँ र मौलिक
EFC6602R-A-TR-T नयाँ र मौलिक
ON Semiconductor
ON Semiconductor
EFC6602R-A-TR IGBT Transistors MOSFET NCH+NCH 2.5V DRIVE SERIES
EFC6602R-TR IGBT Transistors MOSFET NCH+NCH 2.5V DRIVE SERIES
Top