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| PartNumber | DMT10H015LFG-7 | DMT10H015LFG-13 | DMT10H015LFG |
| Description | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerDI3333-8 | PowerDI3333-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 42 A | 42 A | - |
| Rds On Drain Source Resistance | 13.5 mOhms | 13.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 33.3 nC | 33.3 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2 W | 2 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | PowerDI | PowerDI | - |
| Packaging | Reel | Reel | - |
| Height | 0.8 mm | 0.8 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | DMT10 | DMT10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 8.1 ns | 8.1 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7 ns | 7 ns | - |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 19.7 ns | 19.7 ns | - |
| Typical Turn On Delay Time | 6.5 ns | 6.5 ns | - |
| Unit Weight | 0.002540 oz | 0.002540 oz | - |