 |  |  | |
| PartNumber | DMP32D4SFB-7B | DMP32D4S-7 | DMP32D4S-13 |
| Description | MOSFET 30V P-CH MOSFET | MOSFET 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA | MOSFET P-Ch ENH FET -30V 2.4mOhm -10V -300mA |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | X1-DFN1006-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 400 mA | 300 mA | - |
| Rds On Drain Source Resistance | 2.4 Ohms | 2.4 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | 2.4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 1.3 nC | 1.2 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 540 mW | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | DMP32 | DMP32 | DMP32 |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 20.2 ns | 21.9 ns | 21.9 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8.5 ns | 11.5 ns | 11.5 ns |
| Factory Pack Quantity | 10000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 31.3 ns | 31.8 ns | 31.8 ns |
| Typical Turn On Delay Time | 3.6 ns | 9.86 ns | 9.86 ns |
| Unit Weight | 0.000035 oz | 0.000282 oz | - |
| Forward Transconductance Min | - | 6 S | - |
| Package Case | - | - | SOT23 |
| Pd Power Dissipation | - | - | 540 mW |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 300 mA |
| Vds Drain Source Breakdown Voltage | - | - | - 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 2.4 V |
| Rds On Drain Source Resistance | - | - | 2.4 Ohms |
| Qg Gate Charge | - | - | 1.2 nC |
| Forward Transconductance Min | - | - | 6 S |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMP32D4SW-7 | MOSFET 30V P-CH MOSFET | |
| DMP32D4SFB-7B | MOSFET 30V P-CH MOSFET | ||
| DMP32D4S-7 | MOSFET 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA | ||
| DMP32D4SW-13-F | नयाँ र मौलिक | ||
| DMP32D4SW-7-F | नयाँ र मौलिक | ||
| DMP32D4SW-13 | नयाँ र मौलिक | ||
| DMP32D4SW-7 | IGBT Transistors MOSFET 30V P-CH MOSFET | ||
| DMP32D4SFB-7B | MOSFET 30V P-CH MOSFET | ||
| DMP32D4S-7 | MOSFET 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA | ||
| DMP32D4S-13 | MOSFET P-Ch ENH FET -30V 2.4mOhm -10V -300mA |