DMP308

DMP3085LSD-13 vs DMP3085LSS-13 vs DMP3085LSD

 
PartNumberDMP3085LSD-13DMP3085LSS-13DMP3085LSD
DescriptionMOSFET P-Ch ENH FET -30V 70mOhm -10V -3.9AMOSFET P-Ch ENH FET -30V 70mOhm -10V -3.8A
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels2 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current3.9 A3.8 A, 5.6 A-
Rds On Drain Source Resistance70 mOhms, 70 mOhms70 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge11 nC11 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.1 W1.6 W-
ConfigurationDualSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesDMP3085DMP3085-
Transistor Type2 P-Channel1 P-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min5.8 S5.8 S-
Fall Time14.6 ns14.6 ns-
Product TypeMOSFETMOSFET-
Rise Time5 ns5 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time14.6 ns14.6 ns-
Typical Turn On Delay Time4.8 ns4.8 ns-
Unit Weight0.002610 oz0.002610 oz-
निर्माता भाग # विवरण RFQ
Diodes Incorporated
Diodes Incorporated
DMP3085LSD-13 MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.9A
DMP3085LSS-13 MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.8A
DMP3085LSD नयाँ र मौलिक
DMP3085LSD-13 IGBT Transistors MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.9A
DMP3085LSS-13 MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.8A
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