| PartNumber | DMP1081UCB4-7 | DMP1080UCB4-7 | DMP1096UCB4-7 |
| Description | MOSFET MOSFET BVDSS: 8V-24V | MOSFET P-Ch Enh Mode FET 80mOhm -12V -3.3A | MOSFET MOSFET BVDSS: 8V-24V U-WLB1010-4,3K |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | U-WLB1010-4 | U-WLB1010-4 | U-WLB1010-4 |
| Packaging | Reel | Reel | Reel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| RoHS | - | Y | Y |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | - | 12 V | 12 V |
| Id Continuous Drain Current | - | 3.3 A | 2.6 A |
| Rds On Drain Source Resistance | - | 65 mOhms | 102 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Vgs Gate Source Voltage | - | 6 V | 5 V |
| Qg Gate Charge | - | 5 nC | 3.7 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 820 mW | 820 mW |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Series | - | DMP10 | DMP10 |
| Transistor Type | - | 1 P-Channel | 1 P-Channel |
| Fall Time | - | 28.4 ns | 32.3 ns |
| Rise Time | - | 20.6 ns | 26.9 ns |
| Typical Turn Off Delay Time | - | 38.4 ns | 37.5 ns |
| Typical Turn On Delay Time | - | 16.7 ns | 17.6 ns |
| Forward Transconductance Min | - | - | 4 S |