 |  | | |
| PartNumber | DMN6075S-7 | DMN6075S-7-F | DMN6075S-7-CUT TAPE |
| Description | MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 2.5 A | - | - |
| Rds On Drain Source Resistance | 85 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 12.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.15 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 3 mm | - | - |
| Product | Enhancement Mode MOSFET | - | - |
| Series | DMN60 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Enhancement Mode MOSFET | - | - |
| Width | 1.4 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.1 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 3.5 ns | - | - |
| Unit Weight | 0.000282 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN6075S-7 | MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF | |
| DMN6075S-7-F | नयाँ र मौलिक | ||
| DMN6075S-7-CUT TAPE | नयाँ र मौलिक | ||
| DMN6075S-7 | IGBT Transistors MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF |