DMN307

DMN3070SSN-7 vs DMN3071LFR4-7 vs DMN3070SSN

 
PartNumberDMN3070SSN-7DMN3071LFR4-7DMN3070SSN
DescriptionMOSFET 30V N-CH MOSFETMOSFET MOSFET BVDSS 25V-30V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSC-59-3X2-DFN1010-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current4.2 A3.4 A-
Rds On Drain Source Resistance24 mOhms65 mOhms-
Vgs th Gate Source Threshold Voltage1.1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge13.2 nC4.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation780 mW1.1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReelReel
SeriesDMN3070-DMN3070
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time4.1 ns1.6 ns-
Product TypeMOSFETMOSFET-
Rise Time20.1 ns5.7 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time4.4 ns6 ns-
Typical Turn On Delay Time4.3 ns1.7 ns-
Unit Weight0.000282 oz-0.000282 oz
Package Case--SC-59-3
Id Continuous Drain Current--4.2 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--50 mOhms
निर्माता भाग # विवरण RFQ
Diodes Incorporated
Diodes Incorporated
DMN3070SSN-7 MOSFET 30V N-CH MOSFET
DMN3071LFR4-7R MOSFET MOSFET BVDSS 25V-30V
DMN3071LFR4-7 MOSFET MOSFET BVDSS 25V-30V
DMN3070SSN नयाँ र मौलिक
DMN3070SSN-7 Darlington Transistors MOSFET 30V N-CH MOSFET
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