DMN10H120SF

DMN10H120SFG-13 vs DMN10H120SFG-7 vs DMN10H120SFG

 
PartNumberDMN10H120SFG-13DMN10H120SFG-7DMN10H120SFG
DescriptionMOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pFMOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerDI3333-8PowerDI3333-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current3.8 A--
Rds On Drain Source Resistance68 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge10.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
SeriesD0H120D0H120-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time2.5 ns--
Product TypeMOSFETMOSFET-
Rise Time1.8 ns--
Factory Pack Quantity30002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time11.5 ns--
Typical Turn On Delay Time3.8 ns--
निर्माता भाग # विवरण RFQ
Diodes Incorporated
Diodes Incorporated
DMN10H120SFG-13 MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
DMN10H120SFG-7 MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
DMN10H120SFG नयाँ र मौलिक
DMN10H120SFG-7 MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
DMN10H120SFG-13 MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
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