DMN10H

DMN10H220LVT-7 vs DMN10H220LVT-13 vs DMN10H400SK3-13

 
PartNumberDMN10H220LVT-7DMN10H220LVT-13DMN10H400SK3-13
DescriptionMOSFET 100V N-Ch Enh FET 220mOhm 16VgsMOSFET 100V N-Ch Enh FET 220mOhm 16Vgs
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOT-26-6TSOT-26-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current2.24 A--
Rds On Drain Source Resistance250 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage16 V--
Qg Gate Charge8.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.67 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
SeriesDMN10DMN10-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time3.6 ns--
Product TypeMOSFETMOSFET-
Rise Time8.2 ns--
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time7.9 ns--
Typical Turn On Delay Time6.8 ns--
Unit Weight-0.000459 oz-
निर्माता भाग # विवरण RFQ
Diodes Incorporated
Diodes Incorporated
DMN10H220LVT-7 MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs
DMN10H220LVT-13 MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs
DMN10H700S-7 MOSFET MOSFET BVDSS: 61V-100V
DMN10H400SK3-13 नयाँ र मौलिक
DMN10H700S-7 MOSFET N-CHA 100V 700MA SOT23
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