 | |  | |
| PartNumber | CSD17507 | CSD17507////////////// | CSD17507Q5A |
| Description | MOSFET N-CH 30V 65A 8SON | ||
| Manufacturer | TI | - | Texas Instruments |
| Product Category | FETs - Single | - | FETs - Single |
| Series | - | - | NexFET |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | NexFET |
| Package Case | - | - | 8-PowerTDFN |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | 8-VSON (5x6) |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 3W |
| Transistor Type | - | - | 1 N-Channel |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 530pF @ 15V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 13A (Ta), 65A (Tc) |
| Rds On Max Id Vgs | - | - | 10.8 mOhm @ 11A, 10V |
| Vgs th Max Id | - | - | 2.1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 3.6nC @ 4.5V |
| Pd Power Dissipation | - | - | 3 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 13 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.6 V |
| Rds On Drain Source Resistance | - | - | 11.8 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Qg Gate Charge | - | - | 2.8 nC |
| Forward Transconductance Min | - | - | 16 S |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Texas Instruments |
CSD17507 | नयाँ र मौलिक | |
| CSD17507////////////// | नयाँ र मौलिक | ||
| CSD17507Q5A (NMOS) | नयाँ र मौलिक | ||
| CSD17507Q5A///////////// | नयाँ र मौलिक | ||
| CSD17507Q5A | MOSFET N-CH 30V 65A 8SON |