CLF1G0060S

CLF1G0060S-10U vs CLF1G0060S-30U vs CLF1G0060S-10

 
PartNumberCLF1G0060S-10UCLF1G0060S-30UCLF1G0060S-10
DescriptionRF JFET Transistors Broadband RF power GaN HEMTRF JFET Transistors Broadband RF power GaN HEMT- Bulk (Alt: CLF1G0060S-10)
ManufacturerNXPNXP SemiconductorsNXP Semiconductors
Product CategoryRF JFET TransistorsTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
Transistor TypeHEMTHEMTHEMT
TechnologyGaN SiGaN SiGaN Si
Gain14.5 dB13 dB14.5 dB
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage150 V--
Vgs Gate Source Breakdown Voltage3 V--
Id Continuous Drain Current1.7 A--
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT1227B--
PackagingTubeTubeTube
ConfigurationSingleSingleSingle
Height3.48 mm--
Length5.18 mm--
Operating Frequency3.5 GHz3.5 GHz3.5 GHz
Operating Temperature Range- 65 C to + 150 C- 65 C to + 150 C- 65 C to + 150 C
Width4.19 mm--
BrandNXP Semiconductors--
Forward Transconductance Min380 mS--
Number of Channels1 Channel--
Product TypeRF JFET Transistors--
Factory Pack Quantity20--
SubcategoryTransistors--
Vgs th Gate Source Threshold Voltage- 2 V--
Package Case-SOT1227BSOT1227B
Id Continuous Drain Current-5.1 A1.7 A
Vds Drain Source Breakdown Voltage-150 V150 V
Vgs th Gate Source Threshold Voltage-- 2 V- 2 V
Forward Transconductance Min-1.1 S380 mS
Vgs Gate Source Breakdown Voltage-3 V3 V
निर्माता भाग # विवरण RFQ
NXP Semiconductors
NXP Semiconductors
CLF1G0060S-10U RF JFET Transistors Broadband RF power GaN HEMT
CLF1G0060S-10U RF JFET Transistors Broadband RF power GaN HEMT
CLF1G0060S-30U RF JFET Transistors Broadband RF power GaN HEMT
CLF1G0060S-10 - Bulk (Alt: CLF1G0060S-10)
CLF1G0060S-10UAMPLEON-CS नयाँ र मौलिक
CLF1G0060S-30 नयाँ र मौलिक
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