 | | | |
| PartNumber | BUZ354 | BUZ355 | BUZ357 |
| Description | - Bulk (Alt: BUZ355) | Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | |
| Manufacturer | - | INFINEON | SIEMENS |
| Product Category | - | IC Chips | IC Chips |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
| BUZ354 | नयाँ र मौलिक | ||
| BUZ355 | - Bulk (Alt: BUZ355) | ||
| BUZ357 | Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | ||
| BUZ358 | नयाँ र मौलिक | ||
| BUZ36 | Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | ||
| BUZ361 | नयाँ र मौलिक | ||
| BUZ36S | नयाँ र मौलिक | ||
| BUZ37 | नयाँ र मौलिक | ||
| BUZ377 | नयाँ र मौलिक | ||
| BUZ38 | नयाँ र मौलिक | ||
| BUZ380 | नयाँ र मौलिक | ||
| BUZ382 | नयाँ र मौलिक | ||
| BUZ384 | MOSFET Transistor, N-Channel, TO-218AA | ||
| BUZ385 | नयाँ र मौलिक |
