BUK9K17

BUK9K17-60EX vs BUK9K17-60E/C4X vs BUK9K17-60E

 
PartNumberBUK9K17-60EXBUK9K17-60E/C4XBUK9K17-60E
DescriptionMOSFET BUK9K17-60E/LFPAK56D/REEL 7" QTrans MOSFET N-CH 60V 26A 8-Pin SOT-1205 T/R (Alt: BUK9K17-60E/C4X)IGBT Transistors MOSFET 60V Mosfet Dual N-Channel
ManufacturerNexperia-
Product CategoryMOSFET-FETs - Arrays
RoHSE--
TechnologySi-Si
Mounting StyleSMD/SMT--
Package / CaseLFPAK56D-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current26 A--
Rds On Drain Source Resistance12.4 mOhms--
Vgs th Gate Source Threshold Voltage1.4 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge16.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation53 W--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel-Digi-ReelR Alternate Packaging
Transistor Type2 N-Channel--
BrandNexperia--
Fall Time19.2 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time10.7 ns--
Series---
Package Case--SOT-1205, 8-LFPAK56
Operating Temperature---55°C ~ 175°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--LFPAK56D
FET Type--2 N-Channel (Dual)
Power Max--53W
Drain to Source Voltage Vdss--60V
Input Capacitance Ciss Vds--2223pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--26A
Rds On Max Id Vgs--15.6 mOhm @ 10A, 10V
Vgs th Max Id--2.1V @ 1mA
Gate Charge Qg Vgs--16.5nC @ 5V
निर्माता भाग # विवरण RFQ
Nexperia
Nexperia
BUK9K17-60EX MOSFET BUK9K17-60E/LFPAK56D/REEL 7" Q
BUK9K17-60EX MOSFET 2N-CH 60V 26A 56LFPAK
BUK9K17-60E/C4X Trans MOSFET N-CH 60V 26A 8-Pin SOT-1205 T/R (Alt: BUK9K17-60E/C4X)
BUK9K17-60E IGBT Transistors MOSFET 60V Mosfet Dual N-Channel
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