BUK969R3

BUK969R3-100E,118 vs BUK969R3-100E118 vs BUK969R3-100E

 
PartNumberBUK969R3-100E,118BUK969R3-100E118BUK969R3-100E
DescriptionMOSFET BUK969R3-100E/D2PAK/REEL 13" QNow Nexperia BUK969R3-100E - Power Field-Effect Transistor, 100A I(D), 100V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETMOSFET, N-CH, 100V, 100A, D2PAK
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance25.7 mOhms--
Vgs th Gate Source Threshold Voltage2.45 V--
Qg Gate Charge94.3 nC--
Pd Power Dissipation263 W--
QualificationAEC-Q101--
PackagingReel--
BrandNexperia--
Fall Time93.4 ns--
Product TypeMOSFET--
Rise Time95.1 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time118 ns--
Typical Turn On Delay Time39.5 ns--
Unit Weight0.139332 oz--
निर्माता भाग # विवरण RFQ
Nexperia
Nexperia
BUK969R3-100E,118 MOSFET BUK969R3-100E/D2PAK/REEL 13" Q
BUK969R3-100E,118 IGBT Transistors MOSFET BUK969R3-100E/D2PAK/REEL13
BUK969R3-100E118 Now Nexperia BUK969R3-100E - Power Field-Effect Transistor, 100A I(D), 100V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK969R3-100E MOSFET, N-CH, 100V, 100A, D2PAK
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