 |  | | |
| PartNumber | BSZ100N03LS G | BSZ100N03LS | BSZ100N03LSG |
| Description | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 10 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 2.4 ns | 2.4 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.6 ns | 2.6 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | 13 ns | - |
| Typical Turn On Delay Time | 2.9 ns | 2.9 ns | - |
| Part # Aliases | BSZ100N03LSGATMA1 BSZ1N3LSGXT SP000304135 | - | - |
| Part Aliases | - | BSZ100N03LSGATMA1 BSZ100N03LSGXT SP000304135 | - |
| Package Case | - | TSDSON-8 | - |
| Pd Power Dissipation | - | 2.1 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 12 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 10 mOhms | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ100N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | |
| BSZ100N03LSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
Infineon Technologies |
BSZ100N03LSGATMA1 | MOSFET LV POWER MOS | |
| BSZ100N03LS | नयाँ र मौलिक | ||
| BSZ100N03LS G | Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Bulk (Alt: BSZ100N03LSG) | ||
| BSZ100N03LSG | Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSZ100N03LSGATMA1-CUT TAPE | नयाँ र मौलिक |