| PartNumber | BSS670S2LH6327XT | BSS670S2L H6327 | BSS670S2L |
| Description | MOSFET N-Ch 55V 540mA SOT-23-3 | MOSFET N-Ch 55V 540mA SOT-23-3 | MOSFET N-CH 55V 540MA SOT-23 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 540 mA | 540 mA | - |
| Rds On Drain Source Resistance | 650 mOhms | 345 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 1.7 nC | 2.26 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 360 mW | 360 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Series | BSS670S2 | BSS670S2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 1.3 mm | 1.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 600 mS | 600 mS | - |
| Fall Time | 24 ns | 24 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 25 ns | 25 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 21 ns | 21 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Part # Aliases | BSS670S2LH6327XTSA1 SP000928950 | BSS670S2LH6327XTSA1 BSS67S2LH6327XT SP000928950 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |