BSP298

BSP298H6327XUSA1 vs BSP298 E6327 vs BSP298L6327HUSA1

 
PartNumberBSP298H6327XUSA1BSP298 E6327BSP298L6327HUSA1
DescriptionMOSFET N-Ch 400V 500mA SOT-223-3MOSFET N-CH 400V 500MA SOT-223MOSFET N-CH 400V 500MA SOT-223
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage400 V--
Id Continuous Drain Current500 mA--
Rds On Drain Source Resistance2.2 Ohms--
Vgs th Gate Source Threshold Voltage2.1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge---
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length6.5 mm--
SeriesBSP298--
Transistor Type1 N-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Forward Transconductance Min500 mS--
Fall Time20 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesBSP298 H6327 SP001058626--
Unit Weight0.003951 oz--
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
BSP298H6327XUSA1 MOSFET N-Ch 400V 500mA SOT-223-3
BSP298 E6327 MOSFET N-CH 400V 500MA SOT-223
BSP298H6327XUSA1 MOSFET N-CH 400V 500MA SOT-223
BSP298L6327HUSA1 MOSFET N-CH 400V 500MA SOT-223
BSP298 H6327 N-CH MOS-FET 0,5A 400V SOT223
BSP298 MOSFET, N CHANNEL, 400V, 500mA, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:500mA, Drain Source Voltage Vds:400V, On Resistance Rds(on):2.2ohm, Rds(on) Test Voltage Vgs:10
BSP298 L6327 MOSFET N-Ch 400V 500mA SOT-223-3
BSP298E-6327 नयाँ र मौलिक
BSP298E6327 0.45 A, 400 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
BSP298H6327 400V,0.5A,N-channel Power Transisto
BSP298L6327 POWER FIELD-EFFECT TRANSISTOR, 0.5A I(D), 400V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Top