BSM50GP1

BSM50GP120 vs BSM50GP120/DN2 vs BSM50GP120BOSA1

 
PartNumberBSM50GP120BSM50GP120/DN2BSM50GP120BOSA1
DescriptionIGBT Modules 1200V 50A PIMIGBT MODULE 1200V 50A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.5 V--
Continuous Collector Current at 25 C80 A--
Gate Emitter Leakage Current300 nA--
Pd Power Dissipation360 W--
Package / CaseEconoPIM3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length122 mm--
Width62 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM50GP120BOSA1 SP000100379--
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
BSM50GP120 IGBT Modules 1200V 50A PIM
BSM50GP120BOSA1 IGBT MODULE 1200V 50A
BSM50GP120/DN2 नयाँ र मौलिक
BSM50GP120G नयाँ र मौलिक
BSM50GP120 IGBT Modules 1200V 50A PIM
Top