 | |  | |
| PartNumber | BSL308CH6327XTSA1 | BSL308PEH6327XTSA1 | BSL308CL6327HTSA1 |
| Description | MOSFET SMALL SIGNAL+P-CH | MOSFET SMALL SIGNAL+P-CH | MOSFET N/P-CH 30V 2.3A/2A 6TSOP |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-6 | TSOP-6 | - |
| Number of Channels | 2 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 2 A, 2.3 A | 2 A | - |
| Rds On Drain Source Resistance | 130 mOhms, 93 mOhms | 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V, 1.2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | - 1.2 nC, 650 pC | - 1.2 nC, - 1.2 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 0.5 W | 500 mW (1/2 W) | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Tape & Reel (TR) |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3 mm | 3 mm | - |
| Transistor Type | 1 P-Channel, 1 N-Channel | 1 P-Channel | - |
| Width | 1.5 mm | 1.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 4.6 S, 5 S | 4.6 S, 4.6 S | - |
| Fall Time | 2.8 ns. 1.4 ns | 2.8 ns, 2.8 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7.7 ns, 2.3 ns | 7.7 ns, 7.7 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15.3 ns, 8.3 ns | 15.3 ns, 15.3 ns | - |
| Typical Turn On Delay Time | 5.6 ns, 4.4 ns | 5.6 ns, 5.6 ns | - |
| Part # Aliases | BSL308C H6327 SP001101002 | BSL308PE H6327 SP001101004 | - |
| Unit Weight | - | 0.000526 oz | - |
| Series | - | - | OptiMOS |
| Package Case | - | - | SC-74, SOT-457 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 6-TSOP |
| FET Type | - | - | N and P-Channel |
| Power Max | - | - | 500mW |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 275pF @ 15V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 2.3A, 2A |
| Rds On Max Id Vgs | - | - | 80 mOhm @ 2A, 10V |
| Vgs th Max Id | - | - | 2V @ 11μA |
| Gate Charge Qg Vgs | - | - | 500nC @ 10V |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
BSL308CH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSL308PEH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSL308CL6327HTSA1 | MOSFET N/P-CH 30V 2.3A/2A 6TSOP | ||
| BSL308PEH6327XTSA1 | MOSFET 2P-CH 30V 2A 6TSOP | ||
| BSL308PEL6327HTSA1 | MOSFET 2P-CH 30V 2A 6TSOP | ||
| BSL308CH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
| BSL308C | नयाँ र मौलिक | ||
| BSL308C H6327 | MOSFETs | ||
| BSL308CH6327 | नयाँ र मौलिक | ||
| BSL308PE | नयाँ र मौलिक | ||
| BSL308PE H6327 | BSL308PE H6327 | ||
| BSL308PEH6327 | -30V,-2A,Dual P-Channel Power MOSFET | ||
| BSL308PEL6327 | नयाँ र मौलिक | ||
| BSL308C L6327 | IGBT Transistors MOSFET N and P-Ch 30V 2.3A, -2A TSOP-6 |