 | | | |
| PartNumber | BSG0811ND | BSG0810NDIATMA1 | BSG0811NDATMA1 |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET LV POWER MOS | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TISON-8 | TISON-8 | TISON-8 |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | 25 V |
| Id Continuous Drain Current | 50 A | - | 50 A |
| Rds On Drain Source Resistance | 2.4 mOhms, 700 uOhms | - | 2.4 mOhms, 700 uOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | 1.2 V |
| Vgs Gate Source Voltage | 16 V | - | 16 V |
| Qg Gate Charge | 8.4 nC, 29 nC | - | 8.4 nC, 29 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 6.25 W | - | 6.25 W |
| Configuration | Dual | - | Dual |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.15 mm | 1.15 mm | 1.15 mm |
| Length | 6 mm | 6 mm | 6 mm |
| Series | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Width | 5 mm | 5 mm | 5 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 46 S, 90 S | - | 46 S, 90 S |
| Fall Time | 1.4 ns, 2.6 ns | - | 1.4 ns, 2.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4.7 ns, 4.3 ns | - | 4.7 ns, 4.3 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 4.3 ns, 8.8 ns | - | 4.3 ns, 8.8 ns |
| Typical Turn On Delay Time | 4.3 ns, 5.6 ns | - | 4.3 ns, 5.6 ns |
| Part # Aliases | BSG0811NDATMA1 SP001075902 | BSG0810NDI SP001241674 | BSG0811ND SP001075902 |
| Unit Weight | 0.008113 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
BSG0811ND | MOSFET DIFFERENTIATED MOSFETS | |
| BSG0810NDIATMA1 | MOSFET LV POWER MOS | ||
| BSG0811NDATMA1 | MOSFET LV POWER MOS | ||
| BSG0813NDIATMA1 | MOSFET LV POWER MOS | ||
| BSG0810NDIATMA1 | MOSFET 2N-CH 25V 19A/39A 8TISON | ||
| BSG0811ND | MOSFET DIFFERENTIATED MOSFETS | ||
| BSG0811NDATMA1 | MOSFET 2N-CH 25V 19A/41A 8TISON | ||
| BSG0812NDATMA1 | MOSFET N-CH 8TISON | ||
| BSG0813NDIATMA1 | MOSFET 2N-CH 25V 19A/33A 8TISON | ||
| BSG0810ND | नयाँ र मौलिक | ||
| BSG0810NDI | नयाँ र मौलिक | ||
| BSG0812ND | नयाँ र मौलिक | ||
| BSG0813ND | नयाँ र मौलिक | ||
| BSG0813NDI | नयाँ र मौलिक | ||
| BSG0811ND(SP001075902) | नयाँ र मौलिक | ||
| BSG0811NDI | नयाँ र मौलिक | ||
| BSG0813ND1 | नयाँ र मौलिक | ||
| BSG0813NDATMA1 | नयाँ र मौलिक | ||
| BSG0813NDIATMA1INFINEON- | नयाँ र मौलिक | ||
| BSG0810NDIATMA1-CUT TAPE | नयाँ र मौलिक | ||
| BSG0811NDATMA1-CUT TAPE | नयाँ र मौलिक | ||
| BSG0813NDIATMA1-CUT TAPE | नयाँ र मौलिक |