BSC011N03LSI

BSC011N03LSI vs BSC011N03LSIXT vs BSC011N03LSIATMA1

 
PartNumberBSC011N03LSIBSC011N03LSIXTBSC011N03LSIATMA1
DescriptionMOSFET N-Ch 30V 100A TSDSON-8 OptiMOSMOSFET N-Ch 30V 100A TSDSON-8 OptiMOSMOSFET LV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePG-TDSON-8TDSON-8TDSON-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance1.1 mOhms900 uOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge68 nC90 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation96 W96 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.27 mm1.27 mm1.27 mm
Length5.9 mm5.9 mm5.9 mm
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min80 S80 S-
Fall Time6.2 ns6.2 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time9.2 ns9.2 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time35 ns35 ns-
Typical Turn On Delay Time6.4 ns6.4 ns-
Part # AliasesBSC011N03LSIATMA1 BSC11N3LSIXT SP000884574BSC011N03LSIATMA1 SP000884574BSC011N03LSI BSC11N3LSIXT SP000884574
Unit Weight0.003527 oz--
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
BSC011N03LSI MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
BSC011N03LSIXT MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
BSC011N03LSIATMA1 MOSFET N-CH 30V 37A TDSON-8
Infineon Technologies
Infineon Technologies
BSC011N03LSIATMA1 MOSFET LV POWER MOS
BSC011N03LSI MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
BSC011N03LSI BSC011N03LS नयाँ र मौलिक
BSC011N03LSIXT IGBT Transistors MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
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