BSC

BSC047N08NS3 G vs BSC047N08NS3GATMA1 vs BSC048N025S G

 
PartNumberBSC047N08NS3 GBSC047N08NS3GATMA1BSC048N025S G
DescriptionMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3MOSFET N-CH 25V 89A TDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance3.9 mOhms3.9 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge69 nC69 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation125 W125 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min60 S60 S-
Fall Time11 ns11 ns-
Product TypeMOSFETMOSFET-
Rise Time17 ns17 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time44 ns44 ns-
Typical Turn On Delay Time18 ns18 ns-
Part # AliasesBSC047N08NS3GATMA1 BSC47N8NS3GXT SP000436372BSC047N08NS3 BSC47N8NS3GXT G SP000436372-
Unit Weight0.006349 oz0.004310 oz-
  • बाट सुरु गर्नुहोस्
  • BSC 999
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
BSC0503NSIATMA1 MOSFET LV POWER MOS
BSC0502NSIATMA1 MOSFET LV POWER MOS
BSC0504NSIATMA1 MOSFET LV POWER MOS
BSC047N08NS3 G MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC050N03LS G MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
BSC050N04LS G MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3
BSC047N08NS3GATMA1 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC050N03LSGATMA1 MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
BSC050N04LSGATMA1 MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3
BSC050N03LSGXT MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
BSC050N03MS G MOSFET N-Ch 30V 80A TDSON-8 OptiMOS 3M
BSC0501NSIATMA1 MOSFET LV POWER MOS
BSC0500NSIATMA1 MOSFET LV POWER MOS
BSC047N08NS3GATMA1 MOSFET N-CH 80V 100A TDSON-8
BSC0500NSIATMA1 MOSFET N-CH 30V 35A TDSON-8
BSC050N03LSGATMA1 MOSFET N-CH 30V 80A TDSON-8
BSC050N03MSGATMA1 MOSFET N-CH 30V 80A TDSON-8
BSC050N04LSGATMA1 MOSFET N-CH 40V 85A TDSON-8
BSC0501NSIATMA1 MOSFET N-CH 30V 29A 8TDSON
BSC0502NSIATMA1 MOSFET N-CH 30V 26A TDSON-8
BSC0503NSIATMA1 MOSFET N-CH 30V 22A TDSON-8
BSC0504NSIATMA1 MOSFET N-CH 30V 21A TDSON-8
BSC048N025S G MOSFET N-CH 25V 89A TDSON-8
BSC047N08NS3 G MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1
BSC047N08NS3G Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G)
BSC047N08NS3GS नयाँ र मौलिक
BSC047N08NSG नयाँ र मौलिक
BSC048N025SG नयाँ र मौलिक
BSC048N025SGATMA1 नयाँ र मौलिक
BSC0502NSI नयाँ र मौलिक
BSC0504NSI नयाँ र मौलिक
BSC050N03LS नयाँ र मौलिक
BSC050N03LS G Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP
BSC050N03LSG Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP
BSC050N03LSG 08 नयाँ र मौलिक
BSC050N03LSGATMA1 , TDA8 नयाँ र मौलिक
BSC050N03LSGXT Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC050N03MS नयाँ र मौलिक
BSC050N03MS G MOSFET N-Ch 30V 80A TDSON-8 OptiMOS 3M
BSC050N03MSG 30V,80A,N-channel power MOSFET
BSC050N03MSGATMA1 , TDA8 नयाँ र मौलिक
BSC050N03S नयाँ र मौलिक
BSC050N04LS नयाँ र मौलिक
BSC050N04LS G नयाँ र मौलिक
BSC050N04LSG Trans MOSFET N-CH 40V 18A 8-Pin TDSON EP (Alt: BSC050N04LS G)
BSC050N04LSGATMA1 , TDA8 नयाँ र मौलिक
BSC050N08NS5 नयाँ र मौलिक
BSC050N0LSG नयाँ र मौलिक
BSC0500NSIATMA1-CUT TAPE नयाँ र मौलिक
BSC050N03LSGATMA1-CUT TAPE नयाँ र मौलिक
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