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| PartNumber | BSB044N08NN3 G | BSB044N08NN | BSB044N08NN3 G3 |
| Description | MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 | ||
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | WDSON-2-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 3.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 73 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 78 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 0.7 mm | - | - |
| Length | 6.35 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.05 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 36 S | - | - |
| Fall Time | 7 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | BSB044N08NN3GXUMA1 BSB44N8NN3GXT SP000604542 | - | - |
| Part Aliases | - | BSB044N08NN3GXT BSB044N08NN3GXUMA1 SP000604542 | - |
| Package Case | - | WDSON-2 | - |
| Id Continuous Drain Current | - | 90 A | - |
| Vds Drain Source Breakdown Voltage | - | 80 V | - |
| Rds On Drain Source Resistance | - | 4.4 mOhms | - |