 |  | | |
| PartNumber | BLW32 | BLW32A | BLW32F |
| Description | RF Bipolar Transistors RF Transistor | ||
| Manufacturer | Advanced Semiconductor, Inc. | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar Power | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 20 | - | - |
| Collector Emitter Voltage VCEO Max | 30 V | - | - |
| Emitter Base Voltage VEBO | 4 V | - | - |
| Continuous Collector Current | 1 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | SOT-122A | - | - |
| Packaging | Tray | - | - |
| Operating Frequency | 860 MHz | - | - |
| Type | RF Bipolar Power | - | - |
| Brand | Advanced Semiconductor, Inc. | - | - |
| Pd Power Dissipation | 10.8 W | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Subcategory | Transistors | - | - |
