BFU725F/N1,1

BFU725F/N1,115 vs BFU725F/N1,115-CUT TAPE

 
PartNumberBFU725F/N1,115BFU725F/N1,115-CUT TAPE
DescriptionRF Bipolar Transistors 2.8V 0.04A 4-Pin Trans GP BJT NPN
ManufacturerNXP-
Product CategoryRF Bipolar Transistors-
RoHSY-
Transistor TypeBipolar-
TechnologySi-
Transistor PolarityNPN-
DC Collector/Base Gain hfe Min40-
Collector Emitter Voltage VCEO Max2.8 V-
Emitter Base Voltage VEBO0.55 V-
Continuous Collector Current40 mA-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 150 C-
ConfigurationSingle-
Mounting StyleSMD/SMT-
Package / CaseSOT-343-
PackagingReel-
Collector Base Voltage VCBO10 V-
DC Current Gain hFE Max160 at 10 mA at 2 V-
Height1 mm-
Length2.2 mm-
Operating Frequency55 GHz-
TypeRF Bipolar Small Signal-
Width1.35 mm-
BrandNXP Semiconductors-
Gain Bandwidth Product fT55000 MHz-
Maximum DC Collector Current0.04 A-
Pd Power Dissipation136 mW-
Product TypeRF Bipolar Transistors-
Factory Pack Quantity3000-
SubcategoryTransistors-
Part # Aliases934063513115-
Unit Weight0.000235 oz-
निर्माता भाग # विवरण RFQ
NXP Semiconductors
NXP Semiconductors
BFU725F/N1,115 RF Bipolar Transistors 2.8V 0.04A 4-Pin Trans GP BJT NPN
BFU725F/N1,115-CUT TAPE नयाँ र मौलिक
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