 | | |
| PartNumber | BC856W,135 | BC856W,115 |
| Description | Bipolar Transistors - BJT TRANS GP TAPE-11 | Bipolar Transistors - BJT TRANS GP TAPE-7 |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-323-3 | SOT-323-3 |
| Transistor Polarity | PNP | PNP |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | - 65 V | 65 V |
| Collector Base Voltage VCBO | - 80 V | 80 V |
| Emitter Base Voltage VEBO | - 5 V | 5 V |
| Collector Emitter Saturation Voltage | - 250 mV | - |
| Maximum DC Collector Current | - 200 mA | 0.1 A |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| DC Current Gain hFE Max | 475 at - 2 mA, - 5 V | 125 at 2 mA, 5 V |
| Height | 1 mm | 1 mm |
| Length | 2.2 mm | 2.2 mm |
| Packaging | Reel | Reel |
| Width | 1.35 mm | 1.35 mm |
| Brand | Nexperia | Nexperia |
| Continuous Collector Current | - 100 mA | - |
| DC Collector/Base Gain hfe Min | 125 | 125 |
| Pd Power Dissipation | 200 mW | 200 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 10000 | 3000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | /T3 BC856W | BC856W T/R |
| Unit Weight | 0.000176 oz | 0.000176 oz |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Nexperia |
BC856W,135 | Bipolar Transistors - BJT TRANS GP TAPE-11 | |
| BC856W,115 | Bipolar Transistors - BJT TRANS GP TAPE-7 | ||
| BC856W,135 | Bipolar Transistors - BJT TRANS GP TAPE-11 | ||
| BC856W,115 | Bipolar Transistors - BJT TRANS GP TAPE-7 | ||
| BC856W135 | Now Nexperia BC856W - Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon | ||
| BC856W-B-RTKP | नयाँ र मौलिक | ||
| BC856W | TRANS, PNP, -65V, 100MHZ, SOT-323-3, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-65V, Transition Frequency ft:100MHz, Power Dissipation Pd:200mW, DC Collector Current:-100mA, DC | ||
| BC856W , P4KE36A-TP | नयाँ र मौलिक | ||
| BC856W 115 | नयाँ र मौलिक | ||
| BC856W E6327 | नयाँ र मौलिक | ||
| BC856W-3AT | नयाँ र मौलिक | ||
| BC856W-B-RTK | नयाँ र मौलिक | ||
| BC856W-B-RTK/P | नयाँ र मौलिक | ||
| BC856W-SOT323 | नयाँ र मौलिक | ||
| BC856W/934021750115 | नयाँ र मौलिक | ||
| BC856W/Y06 | नयाँ र मौलिक | ||
| BC856W/ZL115 | नयाँ र मौलिक | ||
| BC856W115 | Now Nexperia BC856W - Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon | ||
| BC856WE6327 | नयाँ र मौलिक | ||
| BC856WT1 | नयाँ र मौलिक | ||
| BC856WT1G | नयाँ र मौलिक | ||
NXP Semiconductors |
BC856W/ZLX | TRANSISTOR |