AUIRFZ48ZS

AUIRFZ48ZSTRL vs AUIRFZ48ZS vs AUIRFZ48ZSTRR

 
PartNumberAUIRFZ48ZSTRLAUIRFZ48ZSAUIRFZ48ZSTRR
DescriptionMOSFET AUTO 55V 1 N-CH HEXFET 11mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 11mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 11mOhms
ManufacturerInfineonInfineonInternational Rectifier
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V55 V-
Id Continuous Drain Current44 A61 A-
Rds On Drain Source Resistance11 mOhms11 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation91 W91 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101AEC-Q101-
PackagingReelTubeReel
Height4.4 mm4.4 mm-
Length10 mm10 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time39 ns39 ns39 ns
Product TypeMOSFETMOSFET-
Rise Time69 ns69 ns69 ns
Factory Pack Quantity8001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time35 ns35 ns35 ns
Typical Turn On Delay Time15 ns15 ns15 ns
Part # AliasesSP001516850SP001518766-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Qg Gate Charge-43 nC-
Package Case--TO-252-3
Pd Power Dissipation--91 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--44 A
Vds Drain Source Breakdown Voltage--55 V
Rds On Drain Source Resistance--11 mOhms
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
AUIRFZ48ZSTRL MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms
AUIRFZ48ZS MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms
AUIRFZ48ZS RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms
AUIRFZ48ZSTRR MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms
AUIRFZ48ZSTRL Trans MOSFET N-CH 55V 61A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRFZ48ZSTRL)
Top