 |  | | |
| PartNumber | APT45GR65B | APT45GR65B2DU30 | APT45GR65BSCD10 |
| Description | IGBT Transistors FG, IGBT, 650V, 45A, TO-247 | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 |
| Manufacturer | Microchip | Microchip | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.9 V | - | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| Continuous Collector Current at 25 C | 118 A | - | - |
| Pd Power Dissipation | 543 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 118 A | - | - |
| Height | 5.31 mm | - | - |
| Length | 21.46 mm | - | - |
| Operating Temperature Range | - 55 C to + 150 C | - | - |
| Width | 16.26 mm | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Continuous Collector Current | 118 A | - | - |
| Gate Emitter Leakage Current | 250 nA | - | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | IGBTs | IGBTs | - |
| Tradename | Ultra Fast NPT-IGBT | - | - |
| Unit Weight | 1.340411 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT45GR65B | IGBT Transistors FG, IGBT, 650V, 45A, TO-247 | |
| APT45GR65B2DU30 | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | ||
| APT45GR65BSCD10 | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | ||
| APT45GR65B2DU30 | INSULATED GATE BIPOLAR TRANSISTO | ||
| APT45GR65B | IGBT Transistors |