| PartNumber | ALD1115PAL | ALD1115MAL | ALD1115SAL |
| Description | MOSFET Comp N-Channel & P-Channel | MOSFET Comp N-Channel & P-Channel | MOSFET Comp N-Channel & P-Channel |
| Manufacturer | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
| Package / Case | PDIP-8 | MSOP-8 | SOIC-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 10 V | 12 V | 10 V |
| Id Continuous Drain Current | 4.8 mA, 2 mA | 4.8 mA | 4.8 mA, 2 mA |
| Rds On Drain Source Resistance | 350 Ohms, 1.2 kOhms | 500 Ohms | 350 Ohms, 1.2 kOhms |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | 400 mV |
| Vgs Gate Source Voltage | 10.6 V | 13.2 V | 10.6 V |
| Minimum Operating Temperature | 0 C | 0 C | 0 C |
| Maximum Operating Temperature | + 70 C | + 70 C | + 70 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Series | ALD1115P | ALD1115M | ALD1115S |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Brand | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.032805 oz | 0.004938 oz | 0.002998 oz |
| Forward Transconductance Min | - | 0.0018 S, 0.00067 S | - |