 |  |  | |
| PartNumber | ALD1108ESCL | ALD1108EPCL | ALD1108ESC |
| Description | MOSFET Quad EPAD(R) Prog | MOSFET Quad EPAD(R) Prog | |
| Manufacturer | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices Inc. |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | SOIC-16 | PDIP-16 | - |
| Number of Channels | 4 Channel | 4 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 10 V | 10 V | - |
| Id Continuous Drain Current | 12 mA | 3 mA | - |
| Rds On Drain Source Resistance | 500 Ohms | 500 Ohms | - |
| Vgs Gate Source Voltage | 10.6 V | 12 V | - |
| Minimum Operating Temperature | 0 C | 0 C | - |
| Maximum Operating Temperature | + 70 C | + 70 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | 600 mW | - |
| Configuration | Quad | Quad | - |
| Channel Mode | Depletion | Enhancement | - |
| Packaging | Tube | Tube | Tube |
| Product | MOSFET Small Signal | MOSFET Small Signal | - |
| Series | ALD1108ES | ALD1108EP | EPADR |
| Transistor Type | 4 N-Channel | 4 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Brand | Advanced Linear Devices | Advanced Linear Devices | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 50 | 25 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.023492 oz | 0.036156 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 990 mV | - |
| Package Case | - | - | 16-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | 0°C ~ 70°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 16-SOIC |
| FET Type | - | - | 4 N-Channel, Matched Pair |
| Power Max | - | - | 600mW |
| Drain to Source Voltage Vdss | - | - | 10V |
| Input Capacitance Ciss Vds | - | - | 25pF @ 5V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | - |
| Rds On Max Id Vgs | - | - | 500 Ohm @ 5V |
| Vgs th Max Id | - | - | 1.01V @ 1μA |
| Gate Charge Qg Vgs | - | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Advanced Linear Devices |
ALD1108ESCL | MOSFET Quad EPAD(R) Prog | |
| ALD1108EPCL | MOSFET Quad EPAD(R) Prog | ||
| ALD1108ESC | नयाँ र मौलिक |