| PartNumber | AFGHL50T65SQDC | AFGHL40T65SPD |
| Description | IGBT Transistors Hybrid iGBT 650V 50A FS4 with SiC-SBD | IGBT Transistors FS3 T TO247 40A 65 |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | SiC | Si |
| Package / Case | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.6 V | 1.85 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 100 A | 80 A |
| Pd Power Dissipation | 268 W | 267 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 100 A | 80 A |
| Brand | ON Semiconductor | ON Semiconductor |
| Gate Emitter Leakage Current | 400 nA | 400 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 450 | 450 |
| Subcategory | IGBTs | IGBTs |