 |  | |
| PartNumber | 2ST501T | 2ST5949 |
| Description | Darlington Transistors PWR BIP/S.SIGNAL | Bipolar Transistors - BJT High PWR NPN planar bipolar trans |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | Darlington Transistors | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Configuration | Single | Single |
| Transistor Polarity | NPN | NPN |
| Collector Emitter Voltage VCEO Max | 350 V | 250 V |
| Emitter Base Voltage VEBO | 5 V | 6 V |
| Maximum Collector Cut off Current | 500 uA | - |
| Pd Power Dissipation | 100 W | 250000 mW |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-3 |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | 2ST501 | 2ST5949 |
| Packaging | Tube | Bulk |
| Brand | STMicroelectronics | STMicroelectronics |
| Continuous Collector Current | 4 A | - |
| DC Collector/Base Gain hfe Min | 2000 | 80 at 1 A, 5 V, 35 at 7 A, 5 V |
| Product Type | Darlington Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 100 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.081130 oz | 0.225789 oz |
| Collector Base Voltage VCBO | - | 250 V |
| Maximum DC Collector Current | - | 17 A |
| Gain Bandwidth Product fT | - | 25 MHz |
| DC Current Gain hFE Max | - | 80 |
| Height | - | 8.7 mm |
| Length | - | 39.5 mm |
| Width | - | 26.2 mm |
