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| PartNumber | 2SC3646S-TD-E | 2SC3646S-P-TD-E | 2SC3646T-P-TD-E |
| Description | Bipolar Transistors - BJT BIP NPN 1A 100V | Bipolar Transistors - BJT BIP NPN 1A 100V | Bipolar Transistors - BJT BIP NPN 1A 100V |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PCP-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 120 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.1 V | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Gain Bandwidth Product fT | 120 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SC3646 | 2SC3646 | 2SC3646T-P-TD-E |
| DC Current Gain hFE Max | 280 | - | - |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 140 | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.001812 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
ON Semiconductor |
2SC3646S-TD-E | Bipolar Transistors - BJT BIP NPN 1A 100V | |
| 2SC3646T-TD-E | Bipolar Transistors - BJT BIP NPN 1A 100V | ||
| 2SC3647S-TD-E | Bipolar Transistors - BJT BIP NPN 2A 100V | ||
| 2SC3646S-P-TD-E | Bipolar Transistors - BJT BIP NPN 1A 100V | ||
| 2SC3646S-P-TD-E | Bipolar Transistors - BJT BIP NPN 1A 100V | ||
| 2SC3646T-P-TD-E | Bipolar Transistors - BJT BIP NPN 1A 100V | ||
| 2SC3646S-TD-E | Bipolar Transistors - BJT BIP NPN 1A 100V | ||
| 2SC3646T-TD-E | Bipolar Transistors - BJT BIP NPN 1A 100V | ||
| 2SC3647S-TD-E | Bipolar Transistors - BJT BIP NPN 2A 100V | ||
Renesas Electronics |
2SC3624-T1B-A | Bipolar Transistors - BJT MOSFET | |
| 2SC3624-T1B-A | TRANS NPN 50V 0.15A | ||
| 2SC3624 | नयाँ र मौलिक | ||
| 2SC3624-T1B | MINI MOLD SWITCHING NPN SILICON EPITAXIAL TRANSISTOR FOR AUDIO FREQUENCY AMPLIFIER MINIMOLD, SC-59, 3 PIN | ||
| 2SC3624-T1B/L18 | नयाँ र मौलिक | ||
| 2SC3631 | नयाँ र मौलिक | ||
| 2SC3631-Z-E1-AZ | नयाँ र मौलिक | ||
| 2SC3632 | नयाँ र मौलिक | ||
| 2SC3632-Z-E1 | नयाँ र मौलिक | ||
| 2SC3645 | नयाँ र मौलिक | ||
| 2SC3624 L18 | नयाँ र मौलिक | ||
| 2SC3624-T1(L16) | नयाँ र मौलिक | ||
| 2SC3624-T1B , MAX6404BS3 | नयाँ र मौलिक | ||
| 2SC3624-T1B-A/L18 | नयाँ र मौलिक | ||
| 2SC3624-T1B/L17 | नयाँ र मौलिक | ||
| 2SC3624A-T1(L17)-4 | नयाँ र मौलिक | ||
| 2SC3624A-T1B | TRANSISTOR | ||
| 2SC3624A-T1B,UA78L05ACDR | नयाँ र मौलिक | ||
| 2SC3624A-T1B-A | नयाँ र मौलिक | ||
| 2SC3624A-T1B/L15 | नयाँ र मौलिक | ||
| 2SC3624A-T1B/L16 | नयाँ र मौलिक | ||
| 2SC3624A/L15 | नयाँ र मौलिक | ||
| 2SC3631 C3631 | नयाँ र मौलिक | ||
| 2SC3631,C3631, | नयाँ र मौलिक | ||
| 2SC3631-2SK | नयाँ र मौलिक | ||
| 2SC3632,C3632, | नयाँ र मौलिक | ||
| 2SC3632-AZ-K | नयाँ र मौलिक | ||
| 2SC3632-Z | नयाँ र मौलिक | ||
| 2SC3632-Z(K) | नयाँ र मौलिक | ||
| 2SC3641 | नयाँ र मौलिक | ||
| 2SC3642A , RB521CS-30T2R | नयाँ र मौलिक | ||
| 2SC3645S-TD-E | नयाँ र मौलिक | ||
| 2SC3645S-TD-E , MH36 | नयाँ र मौलिक | ||
| 2SC3646 | नयाँ र मौलिक | ||
| 2SC3646S-TD | नयाँ र मौलिक | ||
| 2SC3646S-TD , RB521ES-30 | नयाँ र मौलिक | ||
| 2SC3647 | नयाँ र मौलिक | ||
| 2SC3647S-TD-E , RB521G-3 | नयाँ र मौलिक | ||
| 2SC3632ZE1AZ | नयाँ र मौलिक | ||
| 2SC3624-T1B/L16 | नयाँ र मौलिक | ||
| 2SC3645T-TD-E | - Bulk (Alt: 2SC3645T-TD-E) |