 |  | | |
| PartNumber | 2SAR522EBTL | 2SAR522EB TL | 2SAR522M |
| Description | Bipolar Transistors - BJT PNP General Purpose Amplification Transistor | ||
| Manufacturer | ROHM Semiconductor | - | Rohm Semiconductor |
| Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-416FL-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 20 V | - | - |
| Collector Base Voltage VCBO | - 20 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 120 mV | - | - |
| Maximum DC Collector Current | - 200 mA | - | - |
| Gain Bandwidth Product fT | 350 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SAR522EB | - | 2SAR522M |
| DC Current Gain hFE Max | 560 | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Brand | ROHM Semiconductor | - | - |
| Continuous Collector Current | - 200 mA | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 2SAR522EB | - | - |
| Unit Weight | 0.000212 oz | - | - |
| Package Case | - | - | SOT-723 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | VMT3 |
| Power Max | - | - | 150mW |
| Transistor Type | - | - | PNP |
| Current Collector Ic Max | - | - | 200mA |
| Voltage Collector Emitter Breakdown Max | - | - | 20V |
| DC Current Gain hFE Min Ic Vce | - | - | 120 @ 1mA, 2V |
| Vce Saturation Max Ib Ic | - | - | 300mV @ 10mA, 100mA |
| Current Collector Cutoff Max | - | - | 100nA (ICBO) |
| Frequency Transition | - | - | 350MHz |