| PartNumber | 2SA1163-BL(TE85L,F | 2SA1163-GR,LF | 2SA1163-BL,LF |
| Description | Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO | Bipolar Transistors - BJT 120V 100MA PNP TRANSISTOR | Bipolar Transistors - BJT Transistor for Low Freq. Amplification |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-346-3 | - | TO-236-3 |
| Transistor Polarity | PNP | - | PNP |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | - 120 V | - | - 120 V |
| Collector Base Voltage VCBO | - 120 V | - | - 120 V |
| Emitter Base Voltage VEBO | - 5 V | - | - 5 V |
| Collector Emitter Saturation Voltage | - 0.3 V | - | - 300 mV |
| Maximum DC Collector Current | - 100 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | 100 MHz |
| Series | 2SA1163 | 2SA1163 | 2SA1163 |
| DC Current Gain hFE Max | 700 | - | 700 |
| Packaging | Reel | Reel | Reel |
| Brand | Toshiba | Toshiba | Toshiba |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | 200 |
| Pd Power Dissipation | 150 mW | - | 150 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | - | 0.000423 oz | 0.000423 oz |
| Technology | - | - | Si |
| Maximum Operating Temperature | - | - | + 125 C |